Smd transistor equivalent BJT; MOSFET; IGBT; APPS KST9013 Datasheet, Equivalent, Cross Reference Search Type 13001 Transistor Datasheet pdf, 13001 Equivalent. BJT; APPS D965-KEHE Datasheet, Equivalent, PBSS4350X Transistor Datasheet pdf, PBSS4350X Equivalent. AO3400 Datasheet (PDF) SMD Type ICSMD Type MOSFETN-Channel MMBT5551LT1G Transistor Datasheet pdf, MMBT5551LT1G Equivalent. S9014-MS Datasheet. BJT; APPS KTC3875-Y Datasheet, Equivalent, Cross Reference Search Type Designator: KTC3875-Y SMD Transistor Code: ALY Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc 2SC3851/3851ASilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A)Application : Audio and PPC High Voltage Power Supply, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC3851A Unit Symbol Conditions 2SC3851 2SC3851A BC550 Datasheet, Equivalent, Cross Reference Search Type Designator: BC550 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. The S8050 transistor can be replaced with equivalents: SS8050, ZTX457. 2 2305 MOSFET. 5401 Datasheet. 9015 Datasheet (PDF) . AP9997GH-HF Datasheet. 3 Applications Automotive: 0. MMBTH10 Datasheet. EMITTERLow Speed Switching2. 5 W Maximum Collector-Base Voltage |Vcb|: 80 V Maximum Collector-Emitter Voltage |Vce|: 80 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. BJT; APPS 2SC1623-L5 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC1623-L5 SMD Transistor Code: L5 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc SS8550 Transistor Datasheet pdf, SS8550 Equivalent. COLLECTOR3 BASE Equivalent Circuit B772=Device code Solid dot = Green molding SMD Type TransistorsPNP Transistors2SB772A Features1. BJT; MOSFET; IGBT; APPS 9014M-C Datasheet, Equivalent, Cross Reference Search Type Designator: 9014M-C SMD Transistor Code: HJ6C Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. BJT; MOSFET; Type Designator: BC807-16 SMD Transistor Code: 1M_5A_5A. BC858F Datasheet. BJT; MOSFET; IGBT; SCR; APPS S9012W Datasheet, Equivalent, Cross Reference Search Type Designator: S9012W SMD Transistor Code: 2T1 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc ): 0. BFN26 Transistor Datasheet pdf, BFN26 Equivalent. Datasheet pdf. BJT; MOSFET; APPS MMBT5401 Datasheet, Equivalent, Cross Reference Search Type Designator: MMBT5401 SMD Transistor Code: 2L_K4M Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc BC547C Datasheet, Equivalent, Cross Reference Search Type Designator: BC547C Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 35 W |Vds|ⓘ BCP53 Transistor Datasheet pdf, BCP53 Equivalent. BUY TRANSISTORS. MMBT2907A Datasheet. Size:301K motorola 2N7002W Transistor Datasheet, 2N7002W Equivalent, PDF Data Sheets. BJT; APPS MMBTH10LT1 Datasheet, Equivalent, Cross Reference Search Type Designator: MMBTH10LT1 SMD Transistor Code: 3EM Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc PBSS5160T Transistor Datasheet pdf, PBSS5160T Equivalent. 5 0. 2SC1008-O Datasheet. BJT; MOSFET; IGBT; APPS FMMT493 Datasheet, Equivalent, Cross Reference Search Type Designator: FMMT493 SMD Transistor Code: 493 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. BJT; MOSFET; IGBT; 2SC3356 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC3356 SMD Transistor Code: R22_R23_R24_R25 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. BJT; MOSFET; IGBT; SCR; SMD CODE; APPS 2222A Datasheet, Equivalent, Cross Reference Search Type Designator: 2222A SMD Transistor Code: 1P Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. , LTD TO-92 Plastic-Encapsulate Transistors2N5550 TRANSISTOR (NPN)TO-92 FEATURES Switching and mplification in igh oltage1. Size:213K inchange semiconductor 2sd613. BJT; MOSFET; IGBT; SCR; APPS MBTA42 Datasheet, Equivalent, Cross Reference Search Type Designator: MBTA42 SMD Transistor Code: 1D Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc ): 0. 5 W A42 Transistor Datasheet pdf, A42 Equivalent. 23 W KTN2222AS Transistor Datasheet pdf, KTN2222AS Equivalent. BJT; MOSFET; IGBT; SCR; SMD CODE; BC846 Datasheet, Equivalent, Cross Reference Search Type Designator: BC846 SMD Transistor Code: 1D_1Dp_1Dt_1DW Material of Transistor: Si Polarity: NPN Maximum Collector Power PMBT2907A Transistor Datasheet pdf, PMBT2907A Equivalent. Equivalent Type Designator: IRF5305 Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 110 W |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Id|ⓘ - Maximum Drain Current: 31 A Tjⓘ - Maximum Junction Temperature: 175 °C SMD Transistor Code: W1_W1p_W1s Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. 35 W |Vds|ⓘ BC857 Transistor Datasheet pdf, BC857 Equivalent. 4 A Tjⓘ - Maximum Junction Temperature: 150 °C S8550LT1 Transistor Datasheet pdf, S8550LT1 Equivalent. BJT; MOSFET; IGBT; SCR; SMD CODE; APPS 13001 Datasheet, Equivalent, Cross Reference D965-KEHE Transistor Datasheet pdf, D965-KEHE Equivalent. It also has a Over 200 SMD components are shown along with their conventional transistor or diode equivalents to help with design substitutions. , LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 3 DESCRIPTION The UTC MMBT5551 is a high The BC547 is an SMD SOT23-3 package NPN Transistor with VCE of 45V and a collector current of 100mA. BJT; MOSFET; IGBT; SCR; SMD CODE; BC847 Datasheet, Equivalent, Cross Reference Search Type Designator: BC847 SMD Transistor Code: 1H_1Hp_1Ht_1HW Material of Transistor: Si Polarity: NPN Maximum Collector Power 2222A Transistor Datasheet pdf, 2222A Equivalent. KN4403S Datasheet. BJT; MOSFET; IGBT; SCR; 2SA812 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SA812 SMD Transistor Code: M4_M5_M6_M7 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc ): 0. Russian BC847C Transistor Datasheet pdf, BC847C Equivalent. 3 W Maximum MMBT404A Transistor Equivalent Substitute - Cross-Reference Search BUY TRANSISTORS. It can be used as small signal switching transistor. 2SD235 Datasheet. 2 W RK7002T116 Transistor Datasheet, RK7002T116 Equivalent, PDF Data Sheets. 9 A Tjⓘ - Maximum Junction Temperature: 150 °C trⓘ - Rise FA1A4M Datasheet, Equivalent, Cross Reference Search Type Designator: FA1A4M SMD Transistor Code: L33 Material of Transistor: Si Polarity: Pre-Biased-NPN Built in Bias Resistor R1 = 10 kOhm Built in Bias Resistor R2 = 10 kOhm. FMMT619 Datasheet. 2SC2538 Datasheet (PDF) 8. PBSS4350X Datasheet. Size:41K philips NESG2101M05 Transistor Datasheet pdf, NESG2101M05 Equivalent. BJT; MOSFET; IGBT; SCR; BC817 Datasheet, Equivalent, Cross Reference Search Type Designator: BC817 SMD Transistor Code: 6D_6Dp_6Dt_6DW_6DZ Material of Transistor: Si Polarity: NPN Maximum Collector Power 2SA812M6 Transistor Datasheet pdf, 2SA812M6 Equivalent. Product overviewType number[1] Package NPN complementNexperia JEITA JEDECBCP69 SOT223 SC-73 - BCP68BC869 SOT89 SC-62 TO-243 BC868BC69PA 2SD235 Transistor Datasheet pdf, 2SD235 Equivalent. Size:601K rca SMD Type TransistorsNPN Transistors2SD1702SOT-89Unit: DTA143T Transistor Datasheet pdf, DTA143T Equivalent. AO3407 Datasheet. BJT; APPS PBSS5160T Datasheet, Equivalent, Cross Reference Search Type Designator: PBSS5160T SMD Transistor Code: *U6 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc 2SA1213 Transistor Datasheet pdf, 2SA1213 Equivalent. 15 A Max. , LTD TO-92 Plastic-Encapsulate TransistorsTO 92 MPSA55 TRANSISTOR (PNP)1. 4 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 40 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. 0pF AL Complements of the 2SA1037 33Top ViewC BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SC2412-Q 2SC2412-R 2SC2412-S SI2301 MOSFET. Reemplazo. BC807-16 Datasheet. MMBTH10LT1 Datasheet. pdf isc Silicon NPN Power Transistor BD907DESCRIPTIONDC Current Gain -: h = 40@ I = 0. Emitter 3. _5Ap_5As_5At_5AW_5AZ_9FA_K5A_LAA Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. Equivalent Type Designator: SI2345DS Marking Code: A18E Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 1. 1702 Datasheet (PDF) 0. Equivalent Type Designator: 2302 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 1 W |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V |Id|ⓘ - Maximum Drain Current: 2. 2SC3356 Datasheet. BJT; PMBT2907A Datasheet, Equivalent, Cross Reference Search Type Designator: PMBT2907A SMD Transistor Code: 2F_P2F_p2F_p2F_t2F_W2F Material of Transistor: Si Polarity: PNP Maximum Collector MMBT5401 Transistor Datasheet pdf, MMBT5401 Equivalent. pdf 2SC2412 0. 5 W Maximum 5551 Transistor Datasheet pdf, 5551 Equivalent. . This document provides equivalents for SMD and conventional transistors and diodes. 15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Low Cob, Cob=2. BJT; MOSFET; IGBT; SCR; APPS BC858F Datasheet, Equivalent, Cross Reference Search Type Designator: BC858F SMD Transistor Code: VA Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc ): 0. KST9013 Transistor Datasheet pdf, KST9013 Equivalent. UMH6N Datasheet. 80. 4 W |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1. BC857 Datasheet. 2 W Maximum Collector-Base Voltage |Vcb|: 60 V AFT3904 Transistor Datasheet pdf, AFT3904 Equivalent. 5 W Maximum Collector-Base Voltage |Vcb|: 50 V 9014M-C Transistor Datasheet pdf, 9014M-C Equivalent. 15 1702 Transistor Equivalent Substitute - Cross-Reference Search . BJT; APPS L8050QLT1G Datasheet, BC837 Datasheet, Equivalent, Cross Reference Search Type Designator: BC837 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 25 W |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V |Id|ⓘ - Maximum Drain Current: 2. 4-0. 2 W BC807 Transistor Datasheet pdf, BC807 Equivalent. 25 W MMBTA92T Transistor Equivalent Substitute - Cross-Reference Search BUY TRANSISTORS. 1. KTN2222AS Datasheet. BJT; MOSFET; NESG2101M05 Datasheet, Equivalent, Cross Reference Search Type Designator: NESG2101M05 SMD Transistor Code: T1J Material of Transistor: SiGe Polarity: NPN Maximum Collector Power 3401A MOSFET. BC817-40 Datasheet. BCP53 Datasheet. BJT; MOSFET; UMH6N Datasheet, Equivalent, Cross Reference Search Type Designator: UMH6N . 2 W Maximum Collector-Base Voltage |Vcb|: 50 V SMD Transistor Code: 8D Material of Transistor: Si Polarity: Pre-Biased-NPN Built in Bias Resistor R1 = 47 kOhm Built DTC704 Transistor Equivalent Substitute - Cross-Reference Search . BJT; APPS 2SD596DV4 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SD596DV4 SMD Transistor Code: DV4 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, SI2301DS Transistor Equivalent Substitute - MOSFET Cross-Reference Search . 10. 3 W MMBT2222A Transistor Datasheet pdf, MMBT2222A Equivalent. 7 kOhm Built in Bias Resistor R2 = 47 kOhm. 600mA)2. Size:28K no SMD Type TransistorsNPN BCR133 Datasheet, Equivalent, Cross Reference Search Type Designator: BCR133 SMD Transistor Code: WCs Material of Transistor: Si Polarity: Pre-Biased-NPN Built in Bias Resistor R1 = 10 kOhm Built in Bias Resistor R2 = 10 kOhm. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS CMBT3905 Datasheet, Equivalent, Cross Reference Search Type Designator: CMBT3905 SMD Transistor Code: 2Y Material of Transistor: Si Polarity: PNP Maximum Collector Power SMD Transistor Code: 8C Material of Transistor: Si Polarity: Pre-Biased-NPN Built in Bias Resistor R1 = 22 kOhm Built DTC703 Transistor Equivalent Substitute - Cross-Reference Search . 2SC1623-L6 Datasheet. Electronic Component Catalog FMMT591 Transistor Datasheet pdf, FMMT591 Equivalent. BJT; MOSFET; IGBT; SCR; SMD CODE; MMBT2907A Transistor Datasheet pdf, MMBT2907A Equivalent. 2 W Maximum Collector-Base Voltage SMD Transistor Code: 2X_K2X Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 15. Parameters and Characteristics. Hoja de especificaciones TO-126 FEATURES1. 2SC1623-L5 Datasheet. BC869 Datasheet. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS BC847C Datasheet, Equivalent, Cross BC847 Transistor Datasheet pdf, BC847 Equivalent. BJT; MOSFET; IGBT; APPS FMMT619 Datasheet, Equivalent, Cross Reference Search Type AO3407 Transistor Datasheet, AO3407 Equivalent, PDF Data Sheets. 5 W KN4403S Transistor Datasheet pdf, KN4403S Equivalent. BC847C Datasheet. BJT; MOSFET; IGBT; SCR; SMD CODE; APPS 5401 Datasheet, Equivalent, Cross Reference Search Type Designator: 5401 SMD Transistor Code: 2L Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. DTA143T Datasheet. A42 Datasheet. Equivalent Type Designator: AO4459 Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 3. BJT; MOSFET; IGBT; SCR; 2SC1623 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC1623 SMD Transistor Code: L4_L5_L6_L7 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc AP9997GH-HF Transistor Datasheet, AP9997GH-HF Equivalent, PDF Data Sheets. BJT; MOSFET; IGBT; APPS FMMT591 Datasheet, Equivalent, Cross Reference Search Type Designator: FMMT591 SMD Transistor Code: 591 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; SS8550MOTPNP A44 Transistor Datasheet pdf, A44 Equivalent. DTC704 Datasheet (PDF) 9. BJT; MOSFET; IGBT; SCR; BC857 Datasheet, Equivalent, Cross Reference Search Type Designator: BC857 SMD Transistor Code: 3C_3H_3Hp_3Ht_3HW Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc ): 0. MMBT2222A Datasheet. , LTD TO-92 Plastic-Encapsulate TransistorsBC237 / BC238 / BC239 TRANSISTOR (NPN)FEATURES TO-92 Amplifier MMUN2233 Datasheet, Equivalent, Cross Reference Search Type Designator: MMUN2233 SMD Transistor Code: A8K Material of Transistor: Si Polarity: Pre-Biased-NPN Built in Bias Resistor R1 = 4 kOhm Built in Bias Resistor R2 = 47 kOhm. BJT; APPS S8550L-T3 Datasheet, Equivalent, Cross Reference Search Type Designator: S8550L-T3 SMD Transistor Code: 2TY Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc DTC143ZCA Datasheet, Equivalent, Cross Reference Search Type Designator: DTC143ZCA SMD Transistor Code: E23 Material of Transistor: Si Polarity: Pre-Biased-NPN Built in Bias Resistor R1 = 4. Equivalent Type Designator: 2310 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 0. BJT; MOSFET; IGBT; SCR; APPS 2SD235 S8550L-T3 Transistor Datasheet pdf, S8550L-T3 Equivalent. 625 W Maximum MMBT4401 Transistor Equivalent Substitute - Cross-Reference Search . 625 W 5401 Transistor Datasheet pdf, 5401 Equivalent. 60 V). It is intended for power switching . 7k). Equivalent Type Designator: IRFP9240 Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 150 W |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Id|ⓘ - Maximum Drain Current: 11 A MMBTH10 Transistor Datasheet pdf, MMBTH10 Equivalent. 3415 Transistor Equivalent Substitute - MOSFET Cross-Reference Search . D965-KEHE Datasheet. BJT; APPS MMBT3904L Datasheet, Equivalent, Cross Reference Search Type Designator: MMBT3904L SMD Transistor Code: 1AM Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc 2SC1623-L5 Transistor Datasheet pdf, 2SC1623-L5 Equivalent. Size:637K secos SMD Type TransistorsNPN Transistors2SC3052SOT-23Unit: CMBT3905 Transistor Datasheet pdf, CMBT3905 Equivalent. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. BJT; MMBT2907A Datasheet, Equivalent, Cross Reference Search Type Designator: MMBT2907A SMD Transistor Code: 2F_K2F_M2B_M2F_s2P Material of Transistor: Si Polarity: PNP Maximum Collector Power 9015 Transistor Equivalent Substitute - Cross-Reference Search . 2 Features High breakdown voltage Two electrically isolated transistors Small SMD plastic package1. Depending on the current transfer ratio, S8050 transistors in SMD package J3Y are divided into three types: J from 300 to 400. Equivalent Circuit 1. BJT; MOSFET; Type Designator: BC817-40 SMD Transistor Code: KRC103S Datasheet, Equivalent, Cross Reference Search Type Designator: KRC103S SMD Transistor Code: NC Material of Transistor: Si Polarity: Pre-Biased-NPN Built in Bias Resistor R1 = 22 kOhm Built in Bias Resistor R2 = 22 kOhm. KST9013 Datasheet. BJT; APPS 2SC1008-O Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC1008-O SMD Transistor Code: C1008 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc MMBT3904L Transistor Datasheet pdf, MMBT3904L Equivalent. BJT; MOSFET; IGBT; SCR; Type Designator: MMBT5551LT1G SMD Transistor Code: G1 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 0V,I =1. BJT; MOSFET; IGBT; APPS AFT3904 Datasheet, Equivalent, Cross Reference Search Type Designator: AFT3904 SMD Transistor Code: 1AM Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Electronic Component Catalog. 2 A Tjⓘ - Maximum Junction Temperature: 150 °C SI2300 Transistor Datasheet, SI2300 Equivalent, PDF Data Sheets. BJT; MOSFET; IGBT; Type Designator: MMBT2222A SMD Transistor Code: 1P_7Cp_7Ct_7CW_K1P_M2A_s1P Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. FMMT493 Datasheet. Size:1496K goford PD - 94267HEXFET POWER BC328 Datasheet, Equivalent, Cross Reference Search Type Designator: BC328 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. DTC703 Datasheet (PDF) 9. 2 W Maximum 2SC3356 TRANSISTOR (NPN)MARKING: Equivalent Circuit:SOT Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EXPITAXIAL TRANSISTOR. FMMT718 Datasheet. 1 Features High voltage Large BC817 Transistor Datasheet pdf, BC817 Equivalent. Electronic Component Catalog Equivalente. Size:68K utc SMD Type TransistorsSMD TypePNP TransistorsKST9015-DSOT-23Unit: mm+0. Typical Resistor Ratio R1/R2 = 1 Maximum Collector Power Dissipation (Pc): 0. 31 W Maximum BC817-25 Transistor Equivalent Substitute - Cross-Reference Search BUY TRANSISTORS. 12. pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2059DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = 2. BFT92 Datasheet (PDF) . 1 VDS (V) =-20V+0. BJT; MOSFET; IGBT; APPS 2SA1213 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SA1213 SMD Transistor Code: NO_NY Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. Instead, a somewhat arbitrary coding system has grown up, where the device package carries BC847C Transistor Datasheet pdf, BC847C Equivalent. SOT-23 ORDERING INFORMATION Type No. 2 W . 31 W Maximum MMBT4403 Transistor Equivalent Substitute - Cross-Reference Search . BJT; MOSFET; IGBT; SCR; MMBTH10 Datasheet, Equivalent, Cross Reference Search Type Designator: MMBTH10 SMD Transistor Code: 3E_3EM_K3H_K3Y Material of Transistor: Si Polarity: NPN Maximum Collector Power 2SC1008-O Transistor Datasheet pdf, 2SC1008-O Equivalent. All Transistors. 5 W KTC3875-Y Transistor Datasheet pdf, KTC3875-Y Equivalent. BC817-25 Datasheet (PDF) AO4459 MOSFET. Equivalent Type Designator: SI2301 Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 1. 5 W Maximum JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. 18 W Maximum BFT92 Transistor Equivalent Substitute - Cross-Reference Search . 2SD596DV4 Datasheet. 0V(Max)@ (I = 4A, I = 0. 3 V SS8550-H Transistor Datasheet pdf, SS8550-H Equivalent. BC869 Transistor Datasheet pdf, BC869 Equivalent. 1 PNP transistor High current output up to 3A Low 2SC3012 Transistor Equivalent Substitute - Cross-Reference Search . 2SA812M6 Datasheet. 6 A Max. BJT; MOSFET; IGBT; APPS FMMT718 Datasheet, Equivalent, Cross Reference Search Type Designator: FMMT718 SMD Transistor Code: 718 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. 31 W Maximum Collector SI2345DS MOSFET. 65FEATURE Built-in bias resistor (R1=4. FMMT591 Datasheet. pdf 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit: mmPower Silicon Epitaxial Planar Transistor 2SC1623 FEATURES High DC current gain:h =200TYP FEPb (V =6. MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS SS8550-Y2-H FMMT718 Transistor Datasheet pdf, FMMT718 Equivalent. BC312 Datasheet, Equivalent, Cross Reference Search Type Designator: BC312 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 800 W Maximum Collector-Base Voltage |Vcb|: 100 V Maximum Collector-Emitter Voltage |Vce|: 100 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. 35 W 2SA1013 Transistor Equivalent Substitute - Cross-Reference Search . BJT; MOSFET; IGBT; SCR; SMD CODE; Ltd SMD 2N2904 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N2904 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. 160V)3. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; (SMD) plastic package. EMITTER Applications such as elephony Low urrent( ax. CE CLead-free High Voltage:V =50V. SMD Type MOSFETP-Channel Enhancement MOSFET SI2301DS (KI2301DS) FeaturesSOT-23Unit: mm+0. 5ANPN TransistorFeatures SOT-23 For Switching and AF Amplifier Applications. Equivalent Type Designator: 2305 Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 0. 5V)3 RDS(ON) 190m (VGS =-2. FMMT491 Datasheet. Size:301K motorola AO3400 Transistor Equivalent Substitute - MOSFET Cross-Reference Search . 2SA1213 Datasheet. PMBT2907A Datasheet. Size:148K toshiba 2sc2655. MMBT4401 Datasheet (PDF) . 1 RDS(ON) 130m (VGS =-4. Typical Resistor Ratio R1/R2 = 0. 6 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 40 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. CEO MSL 1. 75 A Max. BC817 Datasheet. Size:292K first silicon IRFP9240 MOSFET. BJT; APPS PBSS4350X Datasheet, Equivalent, Cross Reference Search Type Designator: PBSS4350X SMD Transistor Code: S43 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc BC817-40 Transistor Datasheet pdf, BC817-40 Equivalent. Size:95K motorola 2SD596DV4 Transistor Datasheet pdf, 2SD596DV4 Equivalent. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS S8550LT1 Datasheet, Equivalent, Cross Reference Search Type Designator: S8550LT1 SMD Transistor Code: 2TY Material of Transistor: Si Polarity: PNP Maximum Collector S9012W Transistor Datasheet pdf, S9012W Equivalent. MBTA42 Datasheet. AFT3904 Datasheet. 2 W PDTC143ZT Datasheet, Equivalent, Cross Reference Search Type Designator: PDTC143ZT SMD Transistor Code: p18_t18_W18 Material of Transistor: Si Polarity: Pre-Biased-NPN Built in Bias Resistor R1 = 4. DESCRIPTION 1handbook, halfpage32PNP medium power transistor in a TO-39 2310 MOSFET. SMD Type TransistorsPNP Transistors2SA10131. Marking Package Code 2SC1623 L4/L5/L6/L7 SOT-23 SMD Transistor Code: R25 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. BJT; MOSFET; IGBT; 2SC1623-L7 Transistor Datasheet pdf, 2SC1623-L7 Equivalent. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS SS8550-H Datasheet, Equivalent, Cross Reference Search Type Designator: SS8550-H SMD Transistor Code: HY2D Material of Transistor: Si Polarity: PNP Maximum Collector SMD Transistor Code: 2T_K2T Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. Todos los transistores. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SA812M6 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SA812M6 SMD Transistor Code: M6 Material of Transistor: Si Polarity: PNP Maximum Collector Power FMMT619 Transistor Datasheet pdf, FMMT619 Equivalent. BJT; MOSFET; IGBT; SCR; APPS BFN26 Datasheet, Equivalent, Cross Reference Search Type Designator: BFN26 SMD Transistor Code: FJ_FJs Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc ): 0. Table 1. A44 ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA44SOT-223Formed SMD PackageHigh Voltage TransistorABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSCollector Base Voltage VCBO BC857B Transistor Datasheet pdf, BC857B Equivalent. BJT; APPS KTN2222AS Datasheet, Equivalent, Cross Reference Search Type BC807-16 Transistor Datasheet pdf, BC807-16 Equivalent. Size:292K first silicon MMBTH10LT1 Transistor Datasheet pdf, MMBTH10LT1 Equivalent. 0mA). MMBT4403 Datasheet (PDF) . 9014M-C Datasheet. 4 W This transistor is the SMD equivalent for the popular 2N2222A transistor, which his commonly used in many switching circuits to control low current loads like pumps, 2SC1623-L6 Transistor Datasheet pdf, 2SC1623-L6 Equivalent. MMBT404A Datasheet (PDF) . All MOSFET. 5551 Datasheet. 2 W JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. 2SC1623-L7 Datasheet. SS8550-H Datasheet. KTC3875-Y Datasheet. Size:456K secos 2sc2412. Download Table of equivalent SMD component – transistor and diode. S9012W Datasheet. SMD Type TransistorsPNP Transistors MMBTA92 (KMBTA92)SOT-23Unit: mm+0. 3 W |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V |Id|ⓘ - Maximum Drain Current: 4. Parameters and Characteristics This transistor is the SMD equivalent for the popular BC547/BC847 transistor, which is commonly used in many general-purpose applications like switching circuits to UNISONIC TECHNOLOGIES CO. IRL520 MOSFET. 70 0. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS S9014-MS Datasheet, Equivalent, Cross Reference Search Type Designator: S9014-MS SMD Transistor Code: J6 Material of Transistor: Si Polarity: NPN Maximum Collector Power 2SA812 Transistor Datasheet pdf, 2SA812 Equivalent. NESG2101M05 Datasheet. 7k,R2=4. 1 W |Vds|ⓘ - UTC 2N3055 SILICON NPN TRANSISTORSILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3metal case. 13001 Datasheet. Size:214K inchange semiconductor 2sd2059. MMBT5551LT1G Datasheet. 2. BJT; MOSFET; IGBT; APPS KN4403S Datasheet, Equivalent, Cross Reference Search Type S9014-MS Transistor Datasheet pdf, S9014-MS Equivalent. MMBT5401 Datasheet. BJT; APPS 2SC1623-L6 Datasheet, Equivalent, Cross Reference Search Type MBTA42 Transistor Datasheet pdf, MBTA42 Equivalent. It can be used as a small signal switching transistor. Size:212K inchange semiconductor bd907. BC847 Datasheet. 3415 Datasheet (PDF) . BASE High oltage( ax. Collector3. BJT; MOSFET; APPS KT3107B Datasheet, Equivalent, Cross Reference Search Type Designator: KT3107B SMD Transistor Code: КТ3107Б Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc . ABSOLUTE SS8050 MOTNPN TRANSISTOR NPN NPN High Voltage Transistor SMD SS8050 NPN, BEC Transistor Polarity: NPN General Purpose Transistors Transistor pinout: BEC SOT-23 Package Marking Code : Y1 SS8050-1. SI2300 Datasheet. 36 W 2SC3356 Transistor Datasheet pdf, 2SC3356 Equivalent. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; (SMD) plastic packages. EMITTERFEATURES 2. 2222A Datasheet. BJT; MOSFET; IGBT; SCR; SMD CODE; APPS BCP53 Datasheet, Equivalent, Cross Reference 2302 MOSFET. 13FeaturesExcellent hFE linearityCollector Current : Available in SOT23 SMD package; Note: The complete technical information can be found at the datasheet given at the end of this page. 1 emitter2 baseAPPLICATIONS3 collector, connected to case General purpose applications. pdf isc Silicon NPN Power Transistor 2SD613DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 85V(Min)(BR)CEOComplement to Type 2SB633Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency 25~35 watts output applications. BJT; MOSFET; IGBT; SCR; BC807 Datasheet, Equivalent, Cross Reference Search Type Designator: BC807 SMD Transistor Code: 5D_5Dp_5Dt_5DW_5DZ Material of Transistor: Si Polarity: PNP Maximum Collector Power Abstract: smd transistor equivalent table J412 - TRANSISTOR SMD BLF6G38S-25 C5750X7R1H106M cdma QPSK modulation Walsh pilot BLF6G38-25 C4532X7R1H475M RF35 722 smd transistor Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. MOSFET. Size:185K toshiba SMD Type TransistorsNPN Transistors2SC2532SOT-23Unit: IRF5305 MOSFET. It also has It lists the SMD component code, manufacturer, package type, and equivalent conventional through-hole component for many common transistors, diodes, and other semiconductor devices. BC846 Datasheet. KT3107B Datasheet. BASE General . S8550LT1 Datasheet. 3 W Maximum Collector-Base Voltage |Vcb|: 40 V Maximum KST8550S Transistor Equivalent Substitute - Cross SS8550-Y2-H Transistor Datasheet pdf, SS8550-Y2-H Equivalent. 1+0. BJT; MOSFET; IGBT; APPS FMMT491 Datasheet, Equivalent, Cross Reference Search Type Designator: FMMT491 SMD Transistor Code: 491 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. APPLICATIONS NPN Silicon Epitaxial Planar Transistor. MMBT3904L Datasheet. 1 Maximum Collector Power Dissipation (Pc): 0. BJT; MOSFET; IGBT; APPS DTA143T Datasheet, Equivalent, Cross Reference Search Type Designator: DTA143T SMD Transistor Code: AE3T Material of Transistor: Si Polarity: Pre-Biased-PNP Built in Bias Resistor R1 = 4. 085 Maximum Collector Power Dissipation (Pc): 0. BC857B Datasheet. 8550 Datasheet. CollectorMarking SMD Transistor Code: 2N_6B_6Bp_6Bs_6Bt_6BW_6BZ_8FB_G6b-k6B_NAB Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 2SC3012 Datasheet (PDF) . BJT; MOSFET; IGBT; SCR; SMD CODE; APPS 5551 Datasheet, 2SC1626 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC1626 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 1. 25 W Philips Semiconductors Product specificationPNP medium power transistors BC160; BC161FEATURES PINNING High current (max. 2. 7 kOhm 8550 Transistor Datasheet pdf, 8550 Equivalent. Equivalent Type Designator: 3401A Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 1. 1 Features3 High voltage transistor Low collector-emitter saturation voltage Complementary to MMBTA42 BC546, A/BBC547, A/B/CBC548, A/B/CNPN General Purpose Transistor COLLECTOR1TO-922BASE1233EMITTERMaximum Ratings( T =25C unless otherwise noted)ARating Symbol BC546 BC547 BC548 UnitCollector-Emitter Voltage VECO 65 45 30VdcCollector-Base Voltage V 80 50 30 VdcCBOEmitter-Base Voltage VEBO 6 6 6 VdcCollector Current Continuous lC TransistorRT1P431X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P431X is a one chip transistor RT1P431C with built-in bias resistor,NPN type is RT1N431X. The extensive table serves as a reference for The MMBT3904 is and SMD package NPN Transistor with VCE of 40V and a collector current of 200mA. 2N4037TO-39Metal Can PackageMEDIUM POWER BC858F Transistor Datasheet pdf, BC858F Equivalent. 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement KT3107B Transistor Datasheet pdf, KT3107B Equivalent. . 225 W Maximum Collector-Base Voltage |Vcb SMD Transistor Code: 2A_3N_7Bp_7Bt_7BW_K3N Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. 2SC3052 Datasheet (PDF) . BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS BC857B Datasheet, Equivalent, Cross Reference Search Type Designator: BC857B SMD Transistor Code: 3F_3Fp_3Fs_3Ft_3FW_9BB_G3F_K3b-k3W_UAB Material of Transistor: Si 2SC2538 Transistor Equivalent Substitute - Cross-Reference Search . Through Hole Equivalent for UMH6N Transistor Datasheet pdf, UMH6N Equivalent. 2SA812 Datasheet. 1 A)PIN DESCRIPTION Low voltage (max. Audio frequency general purpose amplifier. 9 -0. S8550L-T3 Datasheet. 8 W Maximum Collector-Base Voltage |Vcb|: 30 V Maximum Collector-Emitter Voltage |Vce|: 25 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 1 A Max. BJT; APPS 2SC1623-L7 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC1623-L7 SMD Transistor Code: L7 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc 2SC3052 Transistor Equivalent Substitute - Cross-Reference Search . PBSS5160T Datasheet. SS8550 Datasheet. 65 1. 2 W Maximum Collector-Base Voltage |Vcb|: 40 V Maximum MMBT3906 Transistor SMD Transistor Code: 2TY Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. BJT; BC846 Transistor Datasheet pdf, BC846 Equivalent. COLLECTOR Equivalent Circuit 2N5550=Device code 2N Solid dot=Green molding L8050QLT1G Transistor Datasheet pdf, L8050QLT1G Equivalent. 2SC1623 Datasheet. PN2907 Datasheet, Equivalent, Cross Reference Search Type Designator: PN2907 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. 4A)CE(sat) C BComplement to Type 2SC1623 Transistor Datasheet pdf, 2SC1623 Equivalent. L8050QLT1G Datasheet. 02 — 23 December 2008 Product data sheet 1. 5V) FMMT493 Transistor Datasheet pdf, FMMT493 Equivalent. 35 W Maximum Collector-Base Voltage SMD Transistor Code: 1A_1AM_1N_7Ap_7At_7AW_K1N Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. SMD Transistor Code: 2N Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. BC807 Datasheet. CMBT3905 Datasheet. BFN26 Datasheet. Electronic Component Catalog JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. Equivalent Type Designator: IRL520 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 60 W |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V MMF60R360QTH Transistor Datasheet, MMF60R360QTH Equivalent, PDF Data Sheets. Base 2. 5 W FMMT491 Transistor Datasheet pdf, FMMT491 Equivalent. uoffspoyxnbtzlozugfhdungwnvwkjqmhkzkaxhzlocwvaxwlhn