Tip41b File Size: 189Kbytes. 5A; Maximum Current Ic: 6A; Total Dissipation at Tc≤25°C: 65W; Note: Specifications can vary based on manufacturer’s products. TIP41B TIP41C VCBO 80 100 120 140 V Collector-emitter voltage (IB = 0) TIP41 TIP41A TIP41B TIP41C VCEO 40 60 80 100 V Emitter-base voltage VEBO 5 V Continuous collector current IC 6 A Peak collector current (see Note 1) ICM 10 A Continuous base current IB 3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W The TIP41B is a general purpose power transistor in a TO-220 package. - TIP41B: Manufacturer: Part # Datasheet: Description: Motorola, Inc: TIP41B: 222Kb / 6P: POWER TRANSISTORS COMPLEMENTARY SILICON ON Semiconductor: TIP41B: 99Kb / 6P: Complementary Silicon Plastic Power Transistors November, 2007 - Rev. Manufacturer: Mospec Semiconductor. Principales características Número de Parte: TIP41B Material: Si Polaridad de transistor: NPN ESPECIFICACIONES MÁXIMAS Disipación total del dispositivo (Pc): 65 W Tensión colector-base (Vcb): 120 V Tensión colector-emisor (Vce): 80 V Tensión emisor-base (Veb): 5 V TIP41B 80 VCBO Collector-base voltage TIP41C Open emitter 100 V TIP41 40 TIP41A 60 TIP41B 80 VCEO Collector-emitter voltage TIP41C Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 6 A ICM Collector current-Pulse 10 A IB Base current 2 A TC=25℃ 65 PC Collector power dissipation TIP41A / TIP41B / TIP41C Rev. Cerrar. com TIP41/TIP41A/TIP41B/TIP41C Rev. Jedec TO-220 plastic package. The data of TIP41/TIP41A/TIP41B/TIP41C — NP N Epitaxial Silicon Transistor © 2008 Fairchild Semiconductor Corporation www. . com TIP42/TIP42A/TIP42B/TIP42C Rev. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage Figure 3. Salvador 20F - 36 Guadalajara - 0 Monterrey - 0 Compre en linea y recoja en sucursal sin coste de flete. Safe operating area curves indicate I C – VCE limits of the transistor that must be observed for reliable operation; i. 0A TIP41B TIP41C VCBO 80 100 120 140 V Collector-emitter voltage (IB = 0) TIP41 TIP41A TIP41B TIP41C VCEO 40 60 80 100 V Emitter-base voltage VEBO 5 V Continuous collector current IC 6 A Peak collector current (see Note 1) ICM 10 A Continuous base current IB 3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Skip to Main Content (800) 346-6873 TIP41B: Complementary silicon high-power transistor in 4-pin TO-220AB package. Similar Part No. TIP41, TIP41A, TIP41B, TIP41C NPN SILICON POWER TRANSISTORS 4 DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. File Size: 189. Power Derating 1 10 100 1000 10000 1 10 100 1000 VCE = 4V h FE, DC CURRENT GAIN I C[mA], COLLECTOR CURRENT 1 10 100 1000 10000 10 100 1000 NPN SILICON POWER TRANSISTOR, TIP41B Datasheet, TIP41B circuit, TIP41B data sheet : CENTRAL, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors. - TIP41C: Manufacturer: Part # Datasheet: Description: Mospec Semiconductor: TIP41C : 189Kb / 4P: POWER TRANSISTORS(6A,40-100V,65W) TIP41, TIP41A, TIP41B, TIP41C NPN SILICON POWER TRANSISTORS 4 DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP41/TIP41A/TIP41B/TIP41C — NP N Epitaxial Silicon Transistor © 2008 Fairchild Semiconductor Corporation www. 1 = 10% DC Operation MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE T C - Case Temperature - °C 0 25 50 75 100 125 150 P tot - Maximum Power Dissipation - W 0 10 20 30 40 50 60 70 80 TIS633AB. THERMAL INFORMATION Figure 5. Reemplazo. com 3 Typical Performance Characteristics Figure 1. MAXIMUM FORWARD-BIAS SAFE OPERATING AREA V CE - Collector-Emitter Voltage - V 1·0 10 100 TIP41B: COMPLEMENTARY SILICON POWER TRANSISTORS: Datasheet *) TIP41C: COMPLEMENTARY SILICON POWER TRANSISTORS: Datasheet *) TIP42A: COMPLEMENTARY SILICON POWER TRANSISTORS: Datasheet *) TIP42C: COMPLEMENTARY SILICON POWER TRANSISTORS: Datasheet *) TIP41: 80V Vcbo, 6. The TIP41A and TIP41C TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. MAXIMUM FORWARD-BIAS SAFE OPERATING AREA V CE - Collector-Emitter Voltage - V 1·0 10 100 TIP41 Datasheet. Pada saat itu transistor TIP41B dan TIP42B sudah keren. com Welcome to our site! EDAboard. 125 in Pb Free Packages are Available* MAXIMUM RATINGS ADAS and Automation Systems enable modern vehicles to become semi-autonomous with increased safety, minimizing fatalities and injuries. centralsemi. 18. tip41a vceo max. TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications, Features • BSD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets TIP41/41A/41B/41C ® Pb Free Plating Product TIP41/TIP41A/TIP41B/TIP41C Pb NPN Silicon Epitaxial Power Transistor FEATURES: * Medium Power Linear Switching Other data sheets are available within the file: TIP41A, TIP41B, TIP41C. Welcome to EDAboard. 125 in •Pb-Free Packages are Available* MAXIMUM TIP41B: 80 V, 6 A, NPN exitaxial silicon transistor in 3-pin TO-220 package. 5 DECEMBER 1970 - REVISED MARCH 1997 TIP41, TIP41A, TIP41B, TIP41C : TIP41B: TIP41C 40 60 80 100 V V V V VCEO Collector-Emitter Voltage: TIP41: TIP41A: TIP41B: TIP41C 40 60 80 100 V V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP Collector Current (Pulse) 10 A IB Base Current 2 A PC Collector Dissipation (T C=25°C) 65 W PC Collector Dissipation (Ta=25°C) 2 W TJ Junction Temperature 150 °C TIP41B TIP41C VCBO 80 100 120 140 V Collector-emitter voltage (IB = 0) TIP41 TIP41A TIP41B TIP41C VCEO 40 60 80 100 V Emitter-base voltage VEBO 5 V Continuous collector current IC 6 A Peak collector current (see Note 1) ICM 10 A Continuous base current IB 3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W TIP41, TIP41A, TIP41B, TIP41C NPN SILICON POWER TRANSISTORS 1 DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. The TIP41, TIP41A, TIP41B, TIP41C (NPN); and TIP42, TIP42A, TIP42B, TIP42C (PNP) are complementary devices. Page: 4 Pages. Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP41, A, B, C NPN TIP42, A, B, . Part #: TIP41B. types are TIP42A and TIP42C respectively. designed for use in general purpose amplifier and switching applications. TIP41B PBFREE – Bipolar (BJT) Transistor NPN 80 V 6 A 3MHz 65 W Through Hole TO-220-3 from Central Semiconductor Corp. 0 A Power Dissipation PD 65 W TIP41B TIP41C NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP41 SERIES types are NPN Epitaxial-Base Silicon Power Transistors designed for power amplifier and high speed switching applications. 11. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i. 125 in •Pb-Free Packages are Available* MAXIMUM TIP41A / TIP41B / TIP41C — NP N Epitaxial Silicon Transistor www. 0Vebo 65W datasheet, inventory, & pricing. IC-composant offrira des prix formidables, des services de qualité et d'autres pièces électroniques. 1. Manufacturer: Fairchild Semiconductor. Наименование производителя: tip41b Тип материала: si Полярность: npn Максимальная рассеиваемая мощность (pc): 65 w TIP41B, TIP41C (PNP) TIP42, TIP42A, TIP42B, TIP42C Complementary Silicon Plastic Power Transistors. Please confirm your currency selection: The Bipolar Power Transistor is designed for general purpose power amplifier and switching applications. maximum forward-bias safe operating area v ce - collector-emitter voltage - v 1·0 10 100 1000 i c - collector current - a 0·01 0·1 1·0 10 100 sas633ab TIP41, TIP41A, TIP41B, TIP41C NPN SILICON POWER TRANSISTORS 4 DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. - TIP41B: Manufacturer: Part # Datasheet: Description: Mospec Semiconductor: TIP41B: 189Kb / 4P: POWER TRANSISTORS(6A,40-100V,65W) Weitron Technology: TIP41B: 161Kb / 3P: NPN Silicon Power Transistor Foshan Blue Rocket Elec TIP41B: 1,022Kb / 6P: Silicon NPN . MAXIMUM SAFE OPERATING REGIONS Figure 4. for use in medium power linear and switching. Bookmark the permalink. CM501 Datasheet PDF – PMIC for LCD TV / Monitor; PH4148 Datasheet PDF TIP41/TIP41A/TIP41B/TIP41C — NP N Epitaxial Silicon Transistor © 2008 Fairchild Semiconductor Corporation www. 3. 125 in •Pb-Free Packages are Available* MAXIMUM TIP41, TIP41A, TIP41B, TIP41C NPN SILICON POWER TRANSISTORS 1 DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. Part #: TIP41. Emitter Ordering Information Part Number TIP41A TIP41B . The TIP41A, TIP41B and TIP41C are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. Power Derating 1 10 100 1000 10000 1 10 100 1000 VCE = 4V h FE, DC CURRENT GAIN I C[mA], TIP41B TIP41C t p = 300 µs, d = 0. MAXIMUM RATINGS: (TC=25°C) SYMBOL TIP41 TIP41A TIP41B TIP41C UNITS Collector-Base Voltage VCBO 40 60 80 100 V Collector-Emitter Voltage VCEO 40 60 80 100 V Emitter-Base Voltage VEBO 5. They are intented. 3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- TIP41; 60V(Min)- TIP41A 80V(Min)- TIP41B; 100V(Min)- TIP41C tip41b vceo max. 3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- TIP41; 60V(Min)- TIP41A 80V(Min)- TIP41B; 100V(Min)- TIP41C TIP42/TIP42A/TIP42B/TIP42C — PN P Epitaxial Silicon Transistor © 2009 Fairchild Semiconductor Corporation www. 125 in •Pb-Free Packages are Available* MAXIMUM The TIP41A, TIP41B and TIP41C are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. Power Derating 1 10 100 1000 10000 1 10 100 1000 VCE = 4V h FE, DC CURRENT GAIN I C[mA], COLLECTOR CURRENT 1 10 100 1000 10000 10 100 1000 TIP41B TIP41C VCBO 80 100 120 140 V Collector-emitter voltage (IB = 0) TIP41 TIP41A TIP41B TIP41C VCEO 40 60 80 100 V Emitter-base voltage VEBO 5 V Continuous collector current IC 6 A Peak collector current (see Note 1) ICM 10 A Continuous base current IB 3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W TIP41A / TIP41B / TIP41C Rev. Power Derating 1 10 100 1000 10000 1 10 100 tip41, tip41a, tip41b, tip41c (npn); tip42, tip42a, tip42b, tip42c (pnp) 6 package dimensions to-220 case 221a-09 issue ae notes: 1. 1 = 10% DC Operation MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE T C - Case Temperature - °C 0 255075 100125150 P tot - Maximum Power Dissipation - W 0 10 20 30 40 50 60 70 80 E TIS633AB. TIP41A / TIP41B / TIP41C — NP N Epitaxial Silicon Transistor TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. = 80 Vdc (Min) — TIP41B, TIP42B = 100 Vdc (Min) — TIP41C, TIP42C •High Current Gain — Bandwidth Product fT = 3. Основные параметры. Learn more about our holistic sensing capabilities to help you design safer systems that drive towards a higher level of autonomy. 0 MHz (Min) @ IC = 500 mAdc •Compact TO–220 AB Package *MAXIMUM RATINGS 4 Rating Symbol TIP41A TIP42A TIP41B TIP42B TIP41C TIP42C Unit Collector–Emitter Voltage V CEO 60 80 100 Vdc Collector–Base Voltage V CB 60 80 100 Vdc TIP41B – Bipolar (BJT) Transistor NPN 80 V 6 A 3MHz 2 W Through Hole TO-220-3 from onsemi. tip41 vceo max. 0 V Continuous Collector Current IC 6. Даташиты. Designed for Complementary Use with the TIP42 Series 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available Manufacturer: Part # Datasheet: Description: Motorola, Inc: BD243B: 140Kb / 6P: Complementary Silicon Plastic Power Transistors BD787: 148Kb / 6P: Complementary Plastic Silicon Power Transistors 8. B0 2 TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. 1 = 10% t p = 10 ms, d = 0. maximum forward-bias safe operating area v ce - collector-emitter voltage - v 1·0 10 100 1000 i c - collector current - a 0·01 0·1 1·0 10 100 sas633ab TIP41A , TIP41B , TIP41C NPN Epitaxial Silicon Transistor November 2014 TIP41A , TIP41B , TIP41C NPN Epitaxial Silicon Transistor Features Medium Power Linear Switching Applications Complement to TIP42 Series 1 TO-220 1. INTERNAL SCHEMATIC DIAGRAM October 1999 ABSOLUTE MAXIMUM =80 Vdc (min) - TIP41B, TIP42B =100 Vdc (min) - TIP41C, TIP42C; High Current Gain Bandwidth Product f T = 3 MHz (min) @ I C = 500 mAdc; Compact TO-220 AB Package; These are Pb-Free Packages; Product Resources. Operational temperature range from -65 ° C to 150 ° C. Buy TIP41B Texas Instruments; NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum : TIP41B: TIP41C 40 60 80 100 V V V V VCEO Collector-Emitter Voltage: TIP41: TIP41A: TIP41B: TIP41C 40 60 80 100 V V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP Collector Current (Pulse) 10 A IB Base Current 2 A PC Collector Dissipation (T C=25°C) 65 W PC Collector Dissipation (Ta=25°C) 2 W TJ Junction Temperature 150 °C TIP41B TIP41C VCBO 80 100 120 140 V Collector-emitter voltage (IB = 0) TIP41 TIP41A TIP41B TIP41C VCEO 40 60 80 100 V Emitter-base voltage VEBO 5 V Continuous collector current IC 6 A Peak collector current (see Note 1) ICM 10 A Continuous base current IB 3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W The TIP41A, TIP41B and TIP41C are silicon. Datasheet: 166Kb TIP41B TIP41C t p = 300 µs, d = 0. 5 DECEMBER 1970 - REVISED MARCH 1997 TIP41, TIP41A, TIP41B, TIP41C TIP41, TIP41A, TIP41B, TIP41C NPN SILICON POWER TRANSISTORS 4 DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. A0. Power Derating 1 10 100 1000 10000 1 10 100 1000 VCE = 4V h FE, DC CURRENT GAIN I C[mA], COLLECTOR CURRENT 1 10 100 1000 10000 10 100 1000 TIP41A / TIP41B / TIP41C Rev. Equivalente. Reliability Data . TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications, Features • BSD Ratings: Machine Model, C; > 400 V Huma n Body Model, 3B; > 8000 V • Epoxy Meets TIP41B VCEO MAX. 5 DECEMBER 1970 - REVISED MARCH 1997 TIP41, TIP41A, TIP41B, TIP41C TIP41B TIP41C VCBO 80 100 120 140 V Collector-emitter voltage (IB = 0) TIP41 TIP41A TIP41B TIP41C VCEO 40 60 80 100 V Emitter-base voltage VEBO 5 V Continuous collector current IC 6 A Peak collector current (see Note 1) ICM 10 A Continuous base current IB 3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W TIP 41 series (TIP41, 41A, , 41B, 41C) TIP41, 41A, 41B, 41C SEMIHOW REV. For more information please check TIP31 (Advanced Semiconductor, Inc) TIP31 (BOCA) TIP31 (Continental Device India 1) Yes, the BF parameter is Beta Forward, which is the normal Beta value. 125 in •Pb-Free Packages are Available* MAXIMUM TIP41B TIP41C VCBO 80 100 120 140 V Collector-emitter voltage (IB = 0) TIP41 TIP41A TIP41B TIP41C VCEO 40 60 80 100 V Emitter-base voltage VEBO 5 V Continuous collector current IC 6 A Peak collector current (see Note 1) ICM 10 A Continuous base current IB 3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W . 125 in •Pb-Free Packages are Available* MAXIMUM TIP41B TIP41C VCBO 80 100 120 140 V Collector-emitter voltage (IB = 0) TIP41 TIP41A TIP41B TIP41C VCEO 40 60 80 100 V Emitter-base voltage VEBO 5 V Continuous collector current IC 6 A Peak collector current (see Note 1) ICM 10 A Continuous base current IB 3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W TIP41B TIP41C VCBO 80 100 120 140 V Collector-emitter voltage (IB = 0) TIP41 TIP41A TIP41B TIP41C VCEO 40 60 80 100 V Emitter-base voltage VEBO 5 V Continuous collector current IC 6 A Peak collector current (see Note 1) ICM 10 A Continuous base current IB 3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W TIP41B, TIP42B TIP41C, TIP42C There are two limitations on the power handling ability of a transistor: average junction temperature and second break-down. Hoja de especificaciones. Collector 3. 1 = 10% tp = 10 ms, d = 0. 5m, 1982. Transistor TIP 41, TIP41A, TIP41B, TIP41C DISCRIPTION Designed for Complementary Use with the TIP42 Series - 65 W at 25°C Case Temperature-- 6 A Continuous Collector Current-- 10 A Peak Collector Current-- Customer En el caso de artículos enviados desde fuera de la Unión Europea, es posible que se te apliquen cargos adicionales en concepto de IVA y, cuando proceda, derechos de aduana en tu país. Recent Posts. Oct 2007 TIP 41 series (TIP41, 41A, , 41B, 41C) TIP41, 41A, 41B, 41C Medium Power Linear Switching Applications - Complement to TIP42, 42A, 42B, 42C Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP41 tip41, tip41a, tip41b, tip41c npn silicon power transistors 4 december 1970 - revised march 1997 product information maximum safe operating regions figure 4. English. Español $ USD United States. - TIP41B: Manufacturer: Part # Datasheet: Description: Mospec Semiconductor: TIP41B: 189Kb / 4P: POWER TRANSISTORS(6A,40-100V,65W) Weitron Technology: TIP41B: 161Kb / 3P: NPN Silicon Power Transistor TIP41, TIP41A, TIP41B, TIP41C NPN SILICON POWER TRANSISTORS 4 DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. Skip to Main Content (800) 346-6873 Биполярный транзистор tip41b - описание производителя. ← Previous post. 5 m s i c [a], collector current vce[v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 20 40 60 80 100 p c [w], power dissipation t c [oc], case temperature. TIP41 TIP41A TIP41B . 2. 207 Results. File Size: 36Kbytes. tip41a / tip41b / tip41c — np n epitaxial silicon transistor TIP41A / TIP41B / TIP41C — NP N Epitaxial Silicon Transistor www. com. Features ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V 0 @ 0. ABSOLUTE MAXIMUM Silicon NPN transistor in a TO-220 Plastic Package. The TIP41A and TIP41C complementary PNP types are TIP42A and TIP42C respectively. 5 V V CE =4V, I C =3A DC Current Gain V CE =4V, I TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. MAXIMUM FORWARD-BIAS SAFE OPERATING AREA V CE - Collector-Emitter Voltage - V 1·0 10 100 TIP41, TIP41A, TIP41B, TIP41C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP42 Series 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available TO-220 PACKAGE (TOP VIEW) B1 C2 E3 Pin 2 is in electrical contact with the mounting base. MAXIMUM FORWARD-BIAS SAFE OPERATING AREA V CE - Collector-Emitter Voltage - V 1·0 10 100 TIP41B TIP41C NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP41 SERIES types are NPN Epitaxial-Base Silicon Power Transistors designed for power amplifier and high speed switching applications. Features € ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V € Epoxy Meets UL 94 Vï 0 @ 0. TIP41, TIP41A, TIP41B, TIP41C NPN SILICON POWER TRANSISTORS 1 DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. Power Derating 1 10 100 1000 10000 1 10 100 1000 VCE = 4V h FE, DC CURRENT GAIN I C[mA], COLLECTOR CURRENT 1 10 100 1000 10000 10 100 1000 NPN Silicon Power Transistor 65W: Download TIP41B datasheet from National Semiconductor: pdf 333 kb : Trans GP BJT NPN 80V 6A 3-Pin(3+Tab) TO-220 Box Others with the same file for datasheet: TIP41D, TIP41E, TIP41F: Download TIP41B datasheet from TIP41, TIP41A, TIP41B, TIP41C NPN SILICON POWER TRANSISTORS 4 DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. dim min max min max TIP41B TIP41C VCBO 80 100 120 140 V Collector-emitter voltage (IB = 0) TIP41 TIP41A TIP41B TIP41C VCEO 40 60 80 100 V Emitter-base voltage VEBO 5 V Continuous collector current IC 6 A Peak collector current (see Note 1) ICM 10 A Continuous base current IB 3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Base 2. 125 in •Pb-Free Packages are Available* MAXIMUM TIP41B TIP41C VCBO 80 100 120 140 V Collector-emitter voltage (IB = 0) TIP41 TIP41A TIP41B TIP41C VCEO 40 60 80 100 V Emitter-base voltage VEBO 5 V Continuous collector current IC 6 A Peak collector current (see Note 1) ICM 10 A Continuous base current IB 3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W * Complement to TIP42 Series 1 TO-220 1. Power Derating 1 10 100 1000 10000 1 10 100 TIP41B . Related articles across the web General Purpose Photocoupler; This entry was posted in Datasheet and tagged NPN, Transistor. TIP41 VCEO MAX. Datasheet *) There are other manufacturers for this components. 125 in • Pb−Free Packages are Available* MAXIMUM View datasheets for TIP41(A,B,C) by ON Semiconductor and other related components here. 7: Micro Commercial Compon TIP41B: 166Kb / 2P: Silicon NPN Power Transistors ON Semiconductor: TIP41B: 222Kb / 6P: POWER TRANSISTORS COMPLEMENTARY SILICON 1995 REV 1: Order today, ships today. TIP412 Datasheet. Change Location. Datasheet: 189Kb/4P. 0 MHz (Min) @ IC = 500 mAdc • Compact TO–220 AB Package. 0 Adc• Collector–Emitter Sustaining Voltage —VCEO(sus) = 60 Vdc (Min) — TIP41A, TIP42AVCEO(sus) = 80 Vdc (Min) — Download TIP41B Datasheet. TIP41A VCEO MAX. 2) BJTs don't vary a lot, so just select a Spice model that's close to the basic parameters of the transistors you have, which should be good for most simulations, other than perhaps high frequency switching or RF . onsemi. Datasheet TIP41B, TIP42B TIP41C, TIP42C There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Epitaxial-Base NPN power transistors mounted in. 125 in • Pb−Free Packages are Available* MAXIMUM Fairchild Semiconductor was a pioneering semiconductor company that was founded in the late 1950s. Transistor Power masih menggunakan transistor Final type TIP41B dan TIP42B. Part #: TIP42A. • Collector–Emitter Saturation Voltage —VCE(sat) = 1. Sold: 80&hairsp;pcs: Product Code: TIP31C: Category: Power Transistors: The TIP31C is a base island technology NPN power transistor in TO-220 plastic package with TIP41B Datasheet (PDF) - Mospec Semiconductor: Click to view in HTML datasheet. Features %PDF-1. Berbentuk kecil tapi mengeluarkan daya lumayan besar! Menurut datasheetsnya, transistor TIP41B dan 42B mampu mengeluarkan daya sampai TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. × TIP41B. CDMX. Emitter Ordering Information Part Number TIP41A TIP41B TIP41C TIP41CTU Top Mark TIP41A TIP41B TIP41C TIP41C TIP41B Datasheet (PDF) - Central Semiconductor Corp: Click to view in HTML datasheet. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0. Product Change Notification. applications. You can change it to match the transistor you have, if desired. 125 in •Pb-Free Packages are Available* MAXIMUM VCEO(sus) = 80 Vdc (Min) — TIP41B, TIP42B VCEO(sus) = 100 Vdc (Min) — TIP41C, TIP42C • High Current Gain — Bandwidth Product fT= 3. CAD Model. , TIP41B Datasheet, TIP41B circuit, TIP41B data sheet : FOSHAN, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors. controlling dimension: inch. MAXIMUM FORWARD-BIAS SAFE OPERATING AREA V CE - Collector-Emitter Voltage - V 1·0 10 100 TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Download. Product services, tools and other useful resources related to TIP42. TIP41B – Bipolar (BJT) Transistor NPN 80 V 6 A 3MHz 2 W Through Hole TO-220-3 from onsemi. 125 in •Pb-Free Packages are Available* MAXIMUM 1Motorola Bipolar Power Transistor Device DataComplementary Silicon PlasticPower Transistors. •ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V •Epoxy Meets UL 94, V−0 @ 1/8” •Pb−Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Berikut ini adalah hasil editan dan pangkasan ampli buatan Rickenbacker ini. TIP41B-BP – Bipolar (BJT) Transistor NPN 80 V 6 A 3MHz 2 W Through Hole TO-220AB from Micro Commercial Co. Description: Medium Power Linear Switching Applications. 7 : Micro TIP41B: 189Kb / 4P: POWER TRANSISTORS(6A,40-100V,65W) Weitron Technology: TIP41B: 161Kb / 3P: NPN Silicon Power Transistor Micro Commercial Compon TIP41B: 166Kb / 2P: Silicon NPN Power Transistors Motorola, Inc: TIP41B: 222Kb / 6P: POWER TRANSISTORS COMPLEMENTARY SILICON ON Semiconductor: TIP41B: 99Kb / 6P: Complementary Silicon TIP41,TIP41A,TIP41B,TIP41C I C =30mA, I B =0 TIP41 TIP41C V 700 µA V CE =30V, I B =0 TIP41 TIP41C 400 µA V CE =40V, V EB =0 TIP41 Collector-Emitter Breakdown Voltage V (BR)CEO I CES TIP41B 80 TIP41B 100 Collector Cutoff Current 40 TIP41A TIP41A Collector-Emitter Saturation Voltage V CE(sat) 1. , the transistor must not be subjected to greater TIP41B TIP41C VCBO 80 100 120 140 V Collector-emitter voltage (IB = 0) TIP41 TIP41A TIP41B TIP41C VCEO 40 60 80 100 V Emitter-base voltage VEBO 5 V Continuous collector current IC 6 A Peak collector current (see Note 1) ICM 10 A Continuous base current IB 3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W The TIP41A, TIP41B and TIP41C are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. 16. 1. 1 = 10% tp = 1 ms, d = 0. 7 %âãÏÓ 230 0 obj >stream hÞ2Q0P°±Ñ H,JÍ+ )JMU0´4Š ! ù¥V”x§V* ê åç¤ú& 58 •d&ç¤‚h}¿ü¢ÜÄ úÄô¢Ä‚Œà’J D€~pI~Q¥~pjr TIP41B onsemi / Fairchild Bipolar Transistors - BJT NPN Epitaxial Sil datasheet, inventory, & pricing. 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The company was known for its innovation in the development of the first commercial transistor and for its contributions to the advancement of the integrated circuit technology. , the transistor must not be subjected to greater dissipa- tion than the curves indicate. fairchildsemi. 125 in € Pbï Free Packages are Available* MAXIMUM TIP41B TIP41C VCBO 80 100 120 140 V Collector-emitter voltage (IB = 0) TIP41 TIP41A TIP41B TIP41C VCEO 40 60 80 100 V Emitter-base voltage VEBO 5 V Continuous collector current IC 6 A Peak collector current (see Note 1) ICM 10 A Continuous base current IB 3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W Commandez des composants Central Semiconductor TIP41B, affichez des actions et des devis de demande pour les composants TIP41B, disponibles chez IC-Components, un distributeur de composants électroniques en ligne de confiance. . pdf INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP41/41A/41B/41C DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= 0. DC Current Gain Figure 2. Part #: TIP41B. TIP41 TIP41A TIP41B TIP41A / TIP41B / TIP41C — NP N Epitaxial Silicon Transistor www. 0 3 Typical Performance Characteristics Figure 1. 3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- TIP41; 60V(Min)- TIP41A 80V(Min)- TIP41B; 100V(Min)- TIP41C TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. dimensioning and tolerancing per ansi y14. 5 Vdc (Max) @ IC = 6. Features •ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V •Epoxy Meets UL 94 V-0 @ 0. IC(MAX) (DC) IC(MAX) (PULSE) 5 m s 1 m s 0. Title: TIP41 TIP41A TIP41B TIP41C TIP42 TIP41/41A TIP41B/41C TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Description: POWER TRANSISTORS(6A,40-100V,65W). MAXIMUM FORWARD-BIAS SAFE OPERATING AREA V CE - Collector-Emitter Voltage - V 1·0 10 100 TIP41B TIP41C t p = 300 µs, d = 0. 3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- TIP41; 60V(Min)- TIP41A 80V(Min)- TIP41B; 100V(Min)- TIP41C TIP41B TIP41C VCBO 80 100 120 140 V Collector-emitter voltage (IB = 0) TIP41 TIP41A TIP41B TIP41C VCEO 40 60 80 100 V Emitter-base voltage VEBO 5 V Continuous collector current IC 6 A Peak collector current (see Note 1) ICM 10 A Continuous base current IB 3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W TIP41B TIN/LEAD Central Semiconductor Bipolar Transistors - BJT NPN 80Vcbo 80Vceo 5. Related Products (11) TIP31C - NPN Medium Power Transistor. 10. Designed for Complementary Use with the TIP42 Series 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available TIP41B PBFREE Central Semiconductor Bipolar Transistors - BJT NPN 80Vcbo 80Vceo 5. TIP41B Datasheet (HTML) - Micro Commercial Components: Similar Part No. 5 m s I C [A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 0 25 50 75 100 125 150 175 0 20 40 60 80 100 P C [W], POWER DISSIPATION T C [oC], CASE TEMPERATURE. Next post → . Cerrar tip41, tip41a, tip41b, tip41c npn silicon power transistors 4 december 1970 - revised march 1997 product information maximum safe operating regions figure 4. Contact Mouser (USA) (800) 346-6873 | Feedback. Skip to Main Content (800) 346-6873. Specifications: Package/Case: TO-220; Transistor Polarity: NPN; Collector-Emitter Voltage Vceo: 80V; Minimum Base Current Ib: 1. Designed for Complementary Use with the TIP42 Series 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available Order today, ships today. e. Existencia del TIP41B en Sucursales. Datasheet *) TIP42A TIP41B – Bipolar (BJT) Transistor NPN 80 V 6 A 3MHz 2 W Through Hole TO-220-3 from onsemi. TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. TIP41B TIP41C t p = 300 µs, d = 0. MARKING: FULL PART NUMBER TO-220 CASE R1 (13-December 2010) www. Datasheet *) TIP41C: 100 V, 6 A, NPN exitaxial silicon transistor in 3-pin TO-220 package. Pricing and Availability on millions of electronic components from Digi-Key Electronics. 6 Kbytes. 3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- TIP41; 60V(Min)- TIP41A 80V(Min)- TIP41B; 100V(Min)- TIP41C TIP41A / TIP41B / TIP41C Rev. Material Composition. ic(max) (dc) ic(max) (pulse) 5 m s 1 m s 0. Safe Operating Area Figure 4. thermal information figure 5. INTERNAL SCHEMATIC DIAGRAM. INTERNAL SCHEMATIC DIAGRAM October 1999 ABSOLUTE MAXIMUM TIP41B - NPN PLASTIC POWER TRANSISTORS. Order today, ships today. They are intented for use in medium power linear and switching applications. Size:180K inchange semiconductor tip41 tip41a tip41b tip41c. dimension z defines a zone where all body and lead irregularities are allowed. The TIP41A and TIP41C complementary PNP. October 1999. 1 = 10% t p = 1 ms, d = 0. Designed for Complementary Use with the TIP42 Series 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available HS Code 8541 HSN8541 HSN 8541 HSN Code 8541 NPN Epitaxial Silicon Transistor NPN Transistor TIP41 TIP41A TIP41B TIP41C. 0 A Peak Collector Current ICM 10 A Continuous Base Current IB 2. Datasheet. Datasheet *) TIP41C: Complementary silicon high-power transistor in 4-pin TO-220AB package. 3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- TIP41; 60V(Min)- TIP41A 80V(Min)- TIP41B; 100V(Min)- TIP41C TIP41B: 189Kb / 4P: POWER TRANSISTORS(6A,40-100V,65W) ON Semiconductor: TIP41B: 99Kb / 6P: Complementary Silicon Plastic Power Transistors November, 2007 - Rev. gvbdtt zmkp algs kmy uvjwx sapaucm vkrzhwk ukruw uzuis rmp

Tip41b. Safe Operating Area Figure 4.